sep.2001 mitsubishi transistor modules QM10HA-HB medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, welders, nc equipment QM10HA-HB i c collector current .......................... 10a v cex collector-emitter voltage ........... 600v h fe dc current gain............................. 250 insulated type ul recognized yellow card no. e80276 (n) file no. e80271 a 1.7 2.4 2.4 1.7 1.3 2.0 b 3.2 9.0max. 24.0max. 3.7 7.0 4.2 0.1 39.0max. 30.2 19.5max. 16.6 r2.1 0.05 0.4 4.2 0.4 24.0max. 0.8 6.35 4.75 0.8 6.35 0.5 6.35 4.75 b c e fig. a fig. b label
sep.2001 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute mounting screw m4 typical value absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c i c p c i b i csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight ratings 600 600 600 7 10 10 83 1 100 40~+150 40~+125 2500 0.98~1.47 10~15 25 unit v v v v a a w a a c c v n m kg cm g mitsubishi transistor modules QM10HA-HB medium power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v s s s c/w c/w c/w limits min. 250 symbol i cex i cbo i ebo v ce (sat) v be (sat) v ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v, collector open i c =10a, i b =40ma i c = 10a (diode forward voltage) i c =10a, v ce =2.0v v cc =300v, i c =10a, i b1 =60ma, i b2 =200ma transistor part diode part conductive grease applied typ. max. 1.0 1.0 40 2.0 2.5 1.5 1.5 10 2.0 1.5 2.5 0.4
sep.2001 1 10 2 10 1 10 0 10 1 10 1 10 2 10 3 10 2 10 1 10 0 10 7 5 4 3 2 7 5 4 3 2 1.0 1.4 1.8 2.2 2.6 3.0 v ce =2.0v t j =25 c 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25 c t j =125 c i c =10a i c =5a i c =1a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 v be(sat) v ce(sat) i b =40ma t j =25 c t j =125 c 20 16 12 8 4 0 012345 t j =25 c i b =100ma i b =60ma i b =40ma i b =20ma i b =10ma 3 10 7 5 4 3 2 2 10 7 5 4 3 2 1 10 0 10 23457 1 10 23457 2 10 v ce =5.0v v ce =2.0v t j =25 c t j =125 c 7 5 3 2 7 5 3 2 7 5 3 2 0 10 23457 1 10 23457 2 10 t j =25 c t j =125 c v cc =300v i b1 =60ma i b2 = 200ma t f t on t s 0 10 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter sa turation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM10HA-HB medium power switching use insulated type
sep.2001 0 10 1 10 2 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 1 10 0 10 1 10 2 10 1 10 1 10 0 10 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 23457 0 10 23457 1 10 t j =25 c t j =125 c i c =10a i b1 =60ma v cc =300v t s t f 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25 c 100s 50s 200s 500ms 1ms dc 20 16 12 8 4 0 0 200 400 600 800 t j =125 c i b2 = 0.5a i b2 = 2.0a 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25 c t j =125 c 7 5 3 2 7 5 3 2 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 7 5 3 2 7 5 3 2 non repetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( s) collector-emitter voltage v ce (v) base reverse current i b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage v ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current i c (a) mitsubishi transistor modules QM10HA-HB medium power switching use insulated type z th (j c) ( c/ w)
sep.2001 0 10 2 10 1 10 3 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 20 40 60 80 100 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1 10 0 10 23457 1 10 23457 2 10 t j =25 c t j =125 c i b2 = 200ma i b1 =60ma v cc =300v i rr q rr t rr 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1 10 7 5 3 2 7 5 3 2 7 5 3 2 2.0 0 7 5 3 2 7 5 3 2 1.0 3.0 i rr (a), q rr ( c) surge collector reverse current i csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM10HA-HB medium power switching use insulated type z th (j c) ( c/ w) t rr ( s)
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